WEEK 3

Week 3

February 14, 2025 

This week, we tackled two key calculations that required a deeper understanding of semiconductor physics. We had to revisit some fundamental concepts to ensure our approach was correct.

  1. Doping Concentration: By analyzing the 1/C² vs. voltage plot, we estimated a doping concentration of 1.601 × 10¹⁶ cm⁻³, which aligns well with values reported in existing literature. We were excited to see that our calculations made sense and matched theoretical expectations.
  2. Schottky Barrier Height: Using the thermionic emission model, we extracted the barrier height from the J-V characteristics, arriving at 0.611 eV—a crucial value affecting diode efficiency and leakage current.

One challenge we faced was making sense of discrepancies between different approaches to extracting the Schottky barrier height. After some troubleshooting, we realized that minor variations in parameter assumptions could lead to different results, reinforcing the importance of careful methodology.

Next Week's Task: We will try to finalize calculations and start designing our project poster. Two members will verify previous calculations, while the others will work on organizing and formatting the poster for a clear and effective presentation. We also plan to rehearse how we will present our findings.

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